Stimulating Growth of Graphene Using Carbon Dioxide Laser Ablation on Silicon Carbide Wafers
نویسندگان
چکیده
This study intends to stimulate growth of graphene using carbon dioxide laser ablation in varying environments. Silicon carbide wafers will provide the medium for graphene production. Wafers will be ablated in three different environments: a near vacuum, at atmospheric pressure in the presence of argon gas, and at atmospheric pressure in the presence of helium, noting that all circumstances keep oxidation of the wafer to a minimum. The beam will be focused on the wafer and pulsed for varying time intervals to test the effects of different infrared radiation exposures and power flux rates on growth patterns. The graphene may exhibit different characteristics, particularly the number of monolayers of carbon that share similar features of this allotrope. Ideally, an appropriate radiation flux bombardment time and synthesis environment yielding monolayer graphene will be extrapolated from this research.
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